Source: Abstract Book and Final Program. Conference titles: International Conference on Amorphous and Microcrystalline Semiconductors : Science and Technology - ICAMS. Unidades: FFCLRP, IFSC
Subjects: CRISTALIZAÇÃO, SEMICONDUTORES, LASER, CRISTALOGRAFIA
ABNT
MULATO, M. et al. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. 2003, Anais.. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo, 2003. . Acesso em: 21 maio 2024.APA
Mulato, M., Zanatta, A. R., Toet, D., & Chambouleyron, I. E. (2003). H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. In Abstract Book and Final Program. Campinas: Faculdade de Filosofia, Ciências e Letras de Ribeirão Preto, Universidade de São Paulo.NLM
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2024 maio 21 ]Vancouver
Mulato M, Zanatta AR, Toet D, Chambouleyron IE. H and N behavior during green and blue pulsed-laser crystallization of a-Si:H, a-Si:N, a-Ge:H, and a-Ge:N alloys. Abstract Book and Final Program. 2003 ;[citado 2024 maio 21 ]